f red ultrafa st soft reco ver y diode, 2 x 15 a fe atures ultrafast recovery ultrasoft recovery v er y low i rrm v er y low q rr specified at operating conditi ons designed and qualified for industrial level benef its reduced rfi and emi reduced power loss in diode and switch ing transistor higher frequency operation reduced snubbing reduced parts count descri p t ion pro duct sum mar y v r 400 v v f at 15 a at 25 c i f ( av ) 2 x 15 a t ( typical ) rr t ( maximum ) j q ( typical ) rr dl ( rec ) m / dt ( typica l ) l ( typical ) rrm n-hf a30p a40c n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 1 o f 5 h fa 3 0 p a 4 0 c i s a s t a t e o f t h e a r t c e n t e r t a p u l t r a f a s t r e c o v e r y d i o d e . e m p l o y i n g t h e l a t e s t i n e p i t a x i a l c o n s t r u c t i o n a n d a d v a n c e d p r o c e s s i n g t e c h n i q u e s i t f e a t u r e s a s u p e r b c o m b i n a t i o n o f c h a r a c t e r i s t i c s w h i c h r e s u l t i n p e r f o r m a n c e w h i c h i s u n s u r p a s s e d b y a n y r e c t i f i e r p r e v i o u s l y a v a i l a b l e . w i t h b a s i c r a t i n g s o f 4 0 0 v a n d 1 5 a p e r l e g c o n t i n u o u s c u r r e n t , t h e h fa 3 0 p a 4 0 c i s e s p e c i a l l y w e l l s u i t e d f o r u s e a s t h e c o m p a n i o n d i o d e f o r i g b t s a n d m o s f e t s . i n a d d i t i o n t o u l t r a f a s t r e c o v e r y t i m e , t h e f r e d p r o d u c t l i n e f e a t u r e s e x t r e m e l y l o w v a l u e s o f p e a k r e c o v e r y c u r r e n t ( i ) a n d d o e s n o t e x h i b i t a n y t e n d e n c y t o r r m s n a p - o f f d u r i n g t h e t b p o r t i o n o f r e c o v e r y . t h e f r e d f e a t u r e s c o m b i n e t o o f f e r d e s i g n e r s a r e c t i f i e r w i t h l o w e r n o i s e a n d s i g n i f i c a n t l y l o w e r s w i t c h i n g l o s s e s i n b o t h t h e d i o d e a n d t h e s w i t c h i n g t r a n s i s t o r. t h e s e f r e d a d v a n t a g e s c a n h e l p t o s i g n i f i c a n t l y r e d u c e s n u b b i n g , c o m p o n e n t c o u n t a n d h e a t s i n k s i z e s . t h e f r e d h fa 3 0 p a 4 0 c i s i d e a l l y s u i t e d f o r a p p l i c a t i o n s i n p o w e r c o n v e r s i o n s y s t e m s ( s u c h a s i n v e r t e r s ) , m o t o r d r i v e s , a n d m a n y o t h e r s i m i l a r a p p l i c a t i o n s w h e r e h i g h s p e e d , h i g h e f f i c i e n c y i s n e e d e d . common cathode common cathode 2 2 1 3 anode 1 anode 2 t o - 2 4 7 a b 1.3 v 150 c 19 ns 4.0 a 80 nc 160 a / s absolu te maxim um ra tings p arameter symbol test condition s v alues units cathod e to anode voltage 400 maximum continuous forw ard current per leg i f 15 a per device 30 single pulse forward current 150 maximum repetitive forward current 60 maximum pow er dissipation 75 w 70 operating junct ion and storage tempe rature range - 55 to + 150 t = 100 oc c t = 100 oc c t = 25 oc c oc p d v r l f s m l f r m t , t j s t g v
therma l - mec han ica l spe cif ica tio ns per leg p ar ameter symbol test conditions min . typ . max . units lead temperature t lead 0.063'' from case (1.6 mm ) for 10 s - - 300 junction to case , single leg conduction r thjc - - k / w junction to case , both legs conducting - - therma l resistance , junction to ambie nt r thja typical socket mount - - 40 thermal resistance , case to heatsin k r thcs mounting surface , flat , smoo th and greased - 0.25 - weight - 6.0 - g - 0.21 - oz . mounting torque 6.0 (5.0) - 12 (10) kgf . cm ( lbf . in ) marking device case style to -247 ab ( jedec ) n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 2 o f 5 n-hf a30p a40c hfa 30 pa 40 c c oc unless otherw ise spec ified ) = 25 p ar ameter symb o l v - = 30 a i f - - a - - 400 1.2 50 - - - pf 25 e lectri cal specif ica t ions ( t j cathode to anode breakdown volta ge v br = 100 a i r maximum forwa rd voltage = 15 a i f = 15 a , t i = 125 oc f j maximum reverse leakage curre nt i rm junction capacitance 1.3 1.5 - - oc unless otherw ise spec ified ) = 25 p ar ameter symb ol ns - - 35 95 dynami c recove r y charac terist ics perleg ( t j reverse recov ery time i f = 1.0 a, di /dt = -100 a/s, v =30 v, t = 25 c f r j 19 - a - 6 3 - nc - 300 60 - peak recovery c urrent reverse recov ery charge t rr t rr1 t rr2 i rrm1 i rrm2 q rr1 q rr2 t = 125 oc j t = 125 oc j t = 125 oc j t = 25 oc j t = 25 oc j t = 25 oc j i = 15 a f di /dt = -200 a/s f v = 266 v r - v fm c t v = 2 0 0 v r t = 1 2 5 c , v = v r a t e d j r r v = v r a t e d r r i = 0 . 5 a , i = 1 . 0 a , i = 2 5 0 m a ( r g # 1 c k t ) f r r r 28 - 1.6 units max . typ . min . units max . typ . min . nh 12 series inductance l s 5 0 5 0 0 - - measured lead to lead 5 mm from pack age body 120 6.0 60 35 10 600 180 - - tes t conditions tes t conditions 1 . 4 0 0 . 7 0
n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 3 o f 5 n-hf a30p a40c fig.2 forward current vs. forward voltage fig.3 reverse recovery time vs. current rate of change ( a ) ( n s ) f i g . 1 m a x i m u m e f f e c t i v e t r a n s i e n t t h e r m a l i m p e d a n c e , j u n c t i o n - t o - c a s e v s . p u l s e d u r a t i o n r e c t a n g u l a r p u l s e d u r a t i o n ( s e c o n d s ) t h e r m a l i m p e d a n c e ( c / w ) , z j c a n o d e - t o - c a t h o d e v o l t a g e ( v ) , v f c u r r e n t r a t e o f c h a n g e ( a / s ) , - d i / d t f f o r w a r d c u r r e n t , i f r e v e r s e r e c o v e r y t i m e , t r r fig.4 reverse recovery charge vs. current rate of change fig 5. reverse recovery current vs. current rate of change ( n c ) ( a ) 0 c u r r e n t r a t e o f c h a n g e ( a / s ) , - d i / d t f c u r r e n t r a t e o f c h a n g e ( a / s ) , - d i / d t f r e v e r s e r e c o v e r y c h a r g e , q r r r e v e r s e r e c o v e r y c u r r e n t , i r r m 600 800 400 1200 200 1000 2.5 2 1.5 1 0.5 0 0 1200 1000 800 600 400 200 0 600 800 400 1200 200 1000 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 p d m n o t e : d u t y f a c t o r d = t / t 1 2 p e a k t = p x z + t dm j j c c t 1 t 2 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 1 . 0 60 50 40 30 20 10 0 t = 1 5 0 c j t = 1 5 0 c j t = 1 2 5 c j t = 2 5 c j t = - 5 5 c j 7.5 a 15 a 30 a 100 80 60 40 20 0 120 t = 1 2 5 c j t = 2 6 6 v r 800 700 600 500 400 300 200 100 0 30 a 7.5 a 15 a t = 1 2 5 c j t = 2 6 6 v r 25 20 15 10 5 0 30 a 15 a 7.5 a t = 1 2 5 c j t = 2 6 6 v r
n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 4 o f 5 n-hf a30p a40c 50 ( p f ) fig.7 maximum average forward current vs. case temperature 1 10 200 f i g 6 . d y n a m i c p a r a m e t e r s v s . j u n c t i o n t e m p e r a t u r e j u n c t i o n t e m p e r a t u r e ( c ) , t j d y n a m i c p a r a m e t e r s , k f ( n o r m a l i z e d t o 1 0 0 0 a / s ) c a s e t e m p e r a t u r e ( c ) l ( a ) f ( a v ) f i g . 8 j u n c t i o n c a p a c i t a n c e v s . r e v e r s e v o l t a g e r e v e r s e v o l t a g e ( v ) , v r j u n c t i o n c a p a c i t a n c e , c j fig.9 reverse recovery parameter test circuit irfp 250 d . u . t . l = 70 h v r = 200 v 0.01 g d s di f / dt adjust fig.10 reverse recovery waveform and definitions q rr 0.5 i rrm di ( rec ) m / dt 0.75 i rrm i rrm t rr t b t a i f di f / dt 0 (1) (2) (3) (4) (5) (1) di / dt - rate of change of current f through zero crossing (2) i rrm - peak re v erse reco v er y current (3) t - re v erse reco v er y time measured rr from z ero crossing point of negativ e going i to point where a line passing f through 0.75 i rrm and 0.50 i rrm e xtrapolated to zero current . (4) q - area under cur v e defined b y t rr rr i rrm l x rr rrm 2 q = rr (5) di / dt - peak rate of change of ( rec ) m current dur ing t b por tion of t rr and t 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 q rr t rr i rrm t rr q rr 40 35 30 25 20 15 10 5 0 25 100 125 150 175 75 50 25 100 125 150 0 75 duty cycle = 0.5 t = 1 7 5 c j 200 150 100 50 0 100
n ell high power products s e m i c o n d u c t o r r o h s r o h s s e m i c o n d u c t o r r o h s r o h s p a g e 5 o f 5 n-hf a30p a40c or de ring in forma tion t abl e 1 - fred family 2 - c urrent rating (3 0 = 30 a, 15a x 2 ) 3 - p ackage outline ( pa = to -247, 3 pin s ) 4 - voltage r a t i ng (40 = 400 v ) 5 - configuration ( c = center tap common cathode) device code 3 1 2 h fa 3 0 p a 4 0 c 6 n 6 - nell semiconductors product - 4 5
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